Energy and charge transfer in organic light-emitting diodes: A soluble quinacridone study

Citation
Se. Shaheen et al., Energy and charge transfer in organic light-emitting diodes: A soluble quinacridone study, J APPL PHYS, 85(11), 1999, pp. 7939-7945
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
11
Year of publication
1999
Pages
7939 - 7945
Database
ISI
SICI code
0021-8979(19990601)85:11<7939:EACTIO>2.0.ZU;2-3
Abstract
A soluble derivative of quinacridone, N,N'-di-isoamyl quinacridone (DIQA), has been synthesized and used to study the mechanisms of Forster energy tra nsfer and charge transfer in organic light-emitting diodes (OLEDs) based on 8-hydroxyquinoline aluminum (Alq(3)). Quantum efficiencies and spectra wer e measured for both photoluminescence (PL) and electroluminescence (EL) for films of poly(9-vinylcarbazole) (PVK) doped with Alq(3) and DIQA. Both PL and EL showed an efficiency enhancement in films of PVK: Alq(3):DIQA compar ed to films of PVK:Alq(3). However, the optimal DIQA doping concentration w as found to be lower for EL than for PL. Examination of the spectra reveale d that more emission originated from DIQA for EL than for PL at a given dop ing level. We conclude that Forster energy transfer from Alq(3) to DIQA occ urs in both cases of PL and EL, but that charge transfer to DIQA occurs in the operation of the OLED resulting in additional pathways to DIQA emission . Ultraviolet photoelectron spectroscopy measurements showed that electron transfer from Alq(3) to DIQA, hole transfer from PVK to DIQA, and hole tran sfer from Alq(3) to DIQA are all energetically favorable processes. These r esults suggest that charge transfer is an important mechanism in the effici ency enhancement seen in OLEDs based on a host-dopant scheme, and that both the electronic properties and the optical properties of the dopant materia l are important parameters for device optimization. (C) 1999 American Insti tute of Physics. [S0021-8979(99)03511-2].