Measurement of x-ray photogeneration in amorphous selenium

Citation
Im. Blevis et al., Measurement of x-ray photogeneration in amorphous selenium, J APPL PHYS, 85(11), 1999, pp. 7958-7963
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
11
Year of publication
1999
Pages
7958 - 7963
Database
ISI
SICI code
0021-8979(19990601)85:11<7958:MOXPIA>2.0.ZU;2-I
Abstract
The use of low-mobility photoconductors in x-ray imaging, especially amorph ous selenium (a-Se), is currently of great interest. Detailed measurements of the photoconversion gain factor W+/- and gain fluctuations sigma have be en obtained to facilitate applications using a-Se and to provide a better u nderstanding of the charge formation process. The measurements were made wi th an x-ray spectrometer constructed using a-Se as the x-ray absorber. Puls e height spectra of known monoenergetic x-ray sources were measured to dete rmine the response of the a-Se. Both the gain and fluctuations calculated f rom the data were found to depend on the x-ray energy epsilon, and the appl ied field E, indicating the recombination of a larger amount of charge that was created initially. (C) 1999 American Institute of Physics. [S0021-8979 (99)07410-1].