Electrical characterization of a He ion implantation-induced induced deep level existing in p plus n InP junctions

Authors
Quintanilla, L Pinacho, R Enriquez, L Pelaez, R Duenas, S Castan, E Bailon, L Barbolla, J
Citation
L. Quintanilla et al., Electrical characterization of a He ion implantation-induced induced deep level existing in p plus n InP junctions, J APPL PHYS, 85(11), 1999, pp. 7978-7980
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
11
Year of publication
1999
Pages
7978 - 7980
Database
ISI
SICI code
0021-8979(19990601)85:11<7978:ECOAHI>2.0.ZU;2-D
Abstract
The electrical characterization of a He ion implantation-induced deep level existing in fully implanted p(+) n InP junctions isolated by He bombardmen t has been carried out in this work. A discrete deep level located at 0.19 eV below the conduction band was detected by deep level transient spectrosc opy (DLTS). Several emission characteristics of this trap were derived by t he correlation between DLTS and capacitance-voltage transient technique. (C ) 1999 American Institute of Physics. [S0021-8979(99)04011-6].