Response to "Comment on 'Influence of the doping element on the electron mobility in n-silicon'" [J-Appl. Phys. 85, 7984 (1999)]

Authors
Kaiblinger-Grujin, G Kosina, H Selberherr, S
Citation
G. Kaiblinger-grujin et al., Response to "Comment on 'Influence of the doping element on the electron mobility in n-silicon'" [J-Appl. Phys. 85, 7984 (1999)], J APPL PHYS, 85(11), 1999, pp. 7986-7986
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
11
Year of publication
1999
Pages
7986 - 7986
Database
ISI
SICI code
0021-8979(19990601)85:11<7986:RT"O'O>2.0.ZU;2-3