Deep-level transient spectroscopy characterization of In0.48Ga0.52P grown at different V/III ratio using a valved phosphorus cracker cell in solid source molecular beam epitaxy

ln(0.48)Ga(0.52)P/n(+)GaAs structures have been grown by solid source molec ular beam epitaxy (SSMBE) on GaAs(100) substrates using a valved phosphorus and arsenic cracker cell. The In0.48Ga0.52P layer grown using this techniq ue was characterized using deep-level transient spectroscopy (DLTS) measure ments to investigate the correlation between the V/III ratio used in ln(0.4 8)Ga(0.52)P growth and the defect characteristics. Under typical growth con ditions used for the In0.48Ga0.52P/n(+)GaAs/GaAs structures, the trap conce ntration increased from 0.16 +/- 0.008 x 10(14) to 1.48 +/- 0.074 x 10(14) cm(-3) when the V/III flux ratio was increased from 10 to 50. The activatio n energy for the electron trap decreased from similar to 0.436 +/- 0.004 to 0.307 +/- 0.008 eV, and saturation above V/III ratio of 40 occurred. There was a corresponding decrease in the electron capture cross section from 6. 3 x 10(-14) to 0.015 x 10(-14) cm(2). The results of this study have import ant implications for the growth of In0.48Ga0.52P by SSMBE using the valved phosphorus cracker cell technique. (C) 1999 Elsevier Science B.V. All right s reserved.