Growth mechanism and growth habit of oxide crystals

Citation
Wj. Li et al., Growth mechanism and growth habit of oxide crystals, J CRYST GR, 203(1-2), 1999, pp. 186-196
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
203
Issue
1-2
Year of publication
1999
Pages
186 - 196
Database
ISI
SICI code
0022-0248(199905)203:1-2<186:GMAGHO>2.0.ZU;2-3
Abstract
In this paper, the growth mechanism and growth habit of oxide crystals are investigated. Firstly, from the kinetics viewpoint, the growth mechanism of ZnO powders under hydrothermal condition is disclosed starting from the hy pothesis of growth unit. It is concluded that the growth mechanism of oxide crystals contains the formation of growth units and the incorporation of g rowth units into the crystal lattice by a dehydration reaction. Then, a new growth interface model of oxide crystals in solution is established on the basis of an ideal growth mechanism of oxide crystals, which considers the interface structure of the crystal as the stacking order of coordination po lyhedrons with OH- ligands. Finally, a new rule concerning the growth habit is deduced considering the relation between the growth rate and the orient ation of the coordination polyhedron at the interface. It is concluded that the direction of the crystal face with the corner of the coordination poly hedron occurring at the interface has the fastest growth rate; the directio n of the crystal face with the edge of the coordination polyhedron occurrin g at the interface has the second fastest growth rate; the direction of the crystal face with the face of the coordination polyhedron occurring at the interface has the slowest growth rate. In terms of this rule, the growth h abit of ZnO crystal particles and AlO(OH) crystal particles, and the effect of reaction medium on the growth habit are successfully explained. (C) 199 9 Elsevier Science B.V. All rights reserved.