Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP

Authors
Biermann, K Hase, A Kunzel, H
Citation
K. Biermann et al., Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP, J CRYST GR, 202, 1999, pp. 36-39
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
36 - 39
Database
ISI
SICI code
0022-0248(199905)202:<36:OPFISC>2.0.ZU;2-F
Abstract
Pyrometric interferometry based on a short wavelength, narrow bandwidth opt ical pyrometer has been developed to control the growth temperature of AlGa AsSb materials grown lattice matched to InP substrates. The achievement of improved growth temperature stability during deposition is verified by narr ow X-ray diffraction and 10 K photoluminescence linewidths. (C) 1999 Elsevi er Science B.V. All rights reserved.