In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy

Authors
Taferner, WT Mahalingam, K Dorsey, DL Eyink, KG
Citation
Wt. Taferner et al., In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy, J CRYST GR, 202, 1999, pp. 128-131
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
128 - 131
Database
ISI
SICI code
0022-0248(199905)202:<128:ISMOGG>2.0.ZU;2-0
Abstract
Spectroscopic ellipsometry and desorption mass spectroscopy were used in si tu to monitor Ga desorption rates and growth modes during molecular beam ep itaxy of GaAs on AlAs under non-unity sticking conditions (620-710 degrees C). The dependence of the reduction in sticking coefficient of Ga as a func tion of the substrate temperature and As:Ga flux ratio was modeled by Monte Carlo simulation. (C) 1999 Elsevier Science B.V. All rights reserved.