An optimized digital alloy growth technique for accurate band gap engineering

We show that under the influence of an electric field in the growth directi on the electronic states in graded-gap semiconductor heterostructures fabri cated with the digital alloy growth technique differ substantially from tho se corresponding to the respective analog potential profile. We therefore s uggest a novel multi-level digital alloy growth technique that allows for a n almost perfect reproduction of the ideal analog case. (C) 1999 Elsevier S cience B.V. All rights reserved.