Surface structure transitions on (001) GaAs during MBE

Experimental phase diagrams of GaAs (0 0 1) surface were obtained by direct measuring of the As, flux and the substrate temperature. The infringement of the epitaxial growth was found to occur at the ratio of As, to Ga fluxes less than or equal to 0.25, Hence, the AS(4) incorporation coefficient is close to unity during MBE. A diffusion model was suggested to describe posi tions of boundaries between surface structures (SS) in the phase diagrams. Dependencies of temperatures of SS transitions on the rate of surface heati ng in the absence of incident fluxes were obtained. The transition temperat ures were discovered to tend to constant values as the heating rate increas ed. A model underlying this dependence was developed. (C) 1999 Published by Elsevier Science B.V. All rights reserved.