Citation
Vv. Preobrazhenskii et al., Experimental determination of the incorporation factor of As-4 during molecular beam epitaxy of GaAs, J CRYST GR, 202, 1999, pp. 170-173
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
202
Year of publication
1999
Pages
170 - 173
Database
ISI
SICI code
0022-0248(199905)202:<170:EDOTIF>2.0.ZU;2-Q
Abstract
The incorporation factor of arsenic during molecular beam epitaxy of GaAs u
sing AS(4) and Ga was experimentally determined. It was found that the inco
rporation factor of As-4 significantly exceeded the value 0.5 for a wide sp
ectrum of growth conditions. In several cases it is close to unity. The rel
ative sensitivity coefficient, eta of the Bayard-Alpert ion gauge was defin
ed for arsenic in the form of AS(4) and As-2. (C) 1999 Elsevier Science B.V
. All rights reserved.