InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps

Authors
Cordier, Y Ferre, D
Citation
Y. Cordier et D. Ferre, InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps, J CRYST GR, 202, 1999, pp. 263-266
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
263 - 266
Database
ISI
SICI code
0022-0248(199905)202:<263:IBLGLM>2.0.ZU;2-8
Abstract
In this work, MBE growth of lattice relaxed InAlAs graded buffer layers on GaAs substrates has been studied, A simple method has been developed to opt imize indium content drop in inverse step buffer layers to generate totally relaxed metamorphic layers. The dependence of strain relaxation on the com position profile of the graded buffer is shown. (C) 1999 Elsevier Science B .V. All rights reserved.