GaN/GaInN-based light emitting diodes grown by molecular beam epitaxy using NH3

III-V nitrides LEDs were grown on c-plane sapphire substrates by molecular beam epitaxy using NH, as nitrogen precursor and solid sources for group-II I elements. LEDs based on GaInN/GaN multiple quantum well structures were f abricated. Their electroluminescence at room temperature is located at 470 nm and the line width is 45 nm at 20 mA. (C) 1999 Elsevier Science B.V. All rights reserved.