Citation
A. Vescan et al., MBE grown AlGaN GaN MODFETs with high breakdown voltage, J CRYST GR, 202, 1999, pp. 327-331
Citations number
10
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
202
Year of publication
1999
Pages
327 - 331
Database
ISI
SICI code
0022-0248(199905)202:<327:MGAGMW>2.0.ZU;2-D
Abstract
We report on the performance of AlGaN/GaN MODFETs grown by MBE. A record va
lue of 410 V maximum drain voltage was measured for devices with current de
nsities of 200 mA/mm. From the dependence of breakdown voltage with gate-dr
ain separation a breakdown held of approximate to 1 MV/cm is estimated. (C)
1999 Elsevier Science B.V. All rights reserved.