Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxy

Cubic InN lavers were grown on the top of InAs buffer films on GaBs(0 0 1) substrates by plasma-assisted molecular beam epitaxy. The growth of the c-I nN films was initiated by a nitridation of the InAs overlayers at 450 degre es C. The lattice constant of c-InN. measured by X-ray is equal to (4.98 +/ - 0.01) Angstrom, in agreement to RHEED measurements made during the growth . Transmission electron microscopy measurements detected stacking faults in the InN layers parallel to the (1 1 1) InN planes. (C) 1999 Elsevier Scien ce B.V. All rights reserved.