Enhancement of surface decomposition using supersonic beam: direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecularbeam epitaxy

The enhancement effect of surface decomposition using supersonic beam was f ound for the first time, in the fabrication of GaN quantum dots on AlGaN/6H -SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum do ts were successfully fabricated using Si which was supplied by supersonic b eam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were inv estigated by photoluminescence measurements. The advantage by using superso nic beam technique in the enhancement of surface reaction was demonstrated. (C) 1999 Elsevier Science B.V. All rights reserved.