Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer

We have studied the growth and structural properties of BeTe/ZnSe superlatt ices. In order to avoid crystal relaxation, the ZnSe/BeTe thickness ratio i s kept close to two. TEM observations show that the BeTe surface is Wavy bu t subsequent ZnSe-overgrowth smooths out the growing surface. X-ray diffrac tion combined with simulations indicate that high structural qualify sample s can be obtained. In addition, it reveals that the formation of a BeSe-ric h inter-facial compound cannot be avoided, even when the growth conditions are adjusted to promote a ZnTe-rich interface (C) 1999 Elsevier Science B.V . All rights reserved.