Strain relaxation of ZnCdSe quantum wells grown on (211)B GaAs measured using the piezoelectric effect

A series of Zn0.85Cd0.15Se/ZnSe quantum wells were grown on (211)B GaAs sub strates. In these samples the piezoelectric effect produces an internal ele ctric field and the quantum confined Stark effect shifts the luminescence t o longer wavelengths. When the well width is greater than the critical thic kness for strain relief layer relaxation decreases the internal field. Chan ges in the position of the excitonic peaks determined by photoluminescence show that the critical thickness for these structures is 20 nm. (C) 1999 El sevier Science B.V. All rights reserved.