Surfactant-mediated growth of Ge/Si(001) studied by Raman spectroscopy andTEM

Citation
G. Brill et al., Surfactant-mediated growth of Ge/Si(001) studied by Raman spectroscopy andTEM, J CRYST GR, 202, 1999, pp. 538-541
Citations number
10
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
538 - 541
Database
ISI
SICI code
0022-0248(199905)202:<538:SGOGSB>2.0.ZU;2-7
Abstract
Growth of Ge/Si follows the Stranski-Krastanov growth mode (2D --> 3D) beca use of the 4.2% lattice mismatch between Ge and Si. However, the growth mod e can be altered to Frank-Van der Merwe (layer-by-layer) by depositing a su itable surfactant. In this study, we have grown thin and thick Ge(0 0 1)/Si (0 0 1) MBE layers with and without As deposition prior to Ge growth in ord er to investigate the details of surfactant-mediated epitaxy. Raman spectro scopy shows that without As surfactant use, Ge and Si interdiffuse at the i nterface and form an alloy, Furthermore, peak shift measurements as well as cross-sectional electron micrographs reveal that layers grown with As slow ly relieve misfit strain through the accommodation of Lomer edge dislocatio ns at the interface leaving a relaxed, nearly defect-free layer. (C) 1999 E lsevier Science B.V. All rights reserved.