Influence of misfit and threading dislocations on the surface morphology of SiGe graded-layers

Authors
Gallas, B Hartmann, JM Berbezier, I Abdallah, M Zhang, J Harris, JJ Joyce, BA
Citation
B. Gallas et al., Influence of misfit and threading dislocations on the surface morphology of SiGe graded-layers, J CRYST GR, 202, 1999, pp. 547-550
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
547 - 550
Database
ISI
SICI code
0022-0248(199905)202:<547:IOMATD>2.0.ZU;2-4
Abstract
The surface morphology of SiGe graded layers has been studied using AFM and TEM. The influence of dislocation gliding in the layer on the cross-hatch pattern indicates that the origin of the cross-hatch is due to misfit dislo cations lying mainly in the graded layer. (C) 1999 Elsevier Science B.V. Al l rights reserved.