Potential barrier formed at n-ZnSe regrowth homointerface by molecular beam epitaxy

Electrical properties of n-ZnSe homointerfaces formed by MBE regrowth proce ss have been investigated by I-V and C-V measurements of Au/n-ZnSe Schottky diodes, and their analyses considering the interface state density distrib ution. I-V and C-Ti behavior of an air-exposed regrown sample was simultane ously fitted by using a superposed distribution of a U-shape and a discrete distribution of interface states with their density between 10(12) and 10( 13) cm(-2) eV(-1). Such a high-density of interface states was somewhat dec reased by regrowth pretreatments using an HCl solution and saturated bromin e water. (C) 1999 Elsevier Science B.V. All rights reserved.