Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation process

Using an atomic force microscope tip-induced direct nano-oxidation method, we have successfully fabricated nanoscaled heavily doped p-type GaAs and n- type InGaP oxide wires. The smallest widths of GaAs and InGaP oxide wires a re both about 30 nm. From this result. it becomes clear that we can easily control the size of GaAs and InGaP oxide wires by adjusting the process con ditions. (C) 1999 Published by Elsevier Science B.V. All rights reserved.