n- and p-type modulation doping of Te related semimagnetic II-VI heterostructures

The study of the interdiffusion in CdTe-CdZnMgTe multiquantum wells p-type doped with nitrogen reveals that the intermixing leading to the destruction of the quantum wells occurs essentially between the Cd and Mg atoms, while the Zn atoms stay in their lattice sites. The interdiffusion is related to high density of N atoms. The n-type doping of (0 0 1) CdTe with aluminium impurities has been successfully achieved leading to very high doping level s (1.1 x 10(19) cm(-3)). The presence of a 2D electron gas in a CdMnTe/CdZn MgTe heterostructure modulation-doped with Al in the barrier has been demon strated. (C) 1999 Elsevier Science B.V. All rights reserved.