Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS

Authors
Harde, P Gibis, R Kaiser, R Kizuki, H Kunzel, H
Citation
P. Harde et al., Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS, J CRYST GR, 202, 1999, pp. 719-722
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
719 - 722
Database
ISI
SICI code
0022-0248(199905)202:<719:SDOFIS>2.0.ZU;2-I
Abstract
The regrowth behaviour of and dopant diffusion in (Ga)In(As)P : Fe layers s electively deposited by metalorganic MBE was assessed. Device quality regro wth and the absence of lateral diffusion and accumulation effects is demons trated as an essential feature for the fabrication of InP-based optoelectro nic devices. (C) 1999 Elsevier Science B.V. All rights reserved.