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The regrowth behaviour of and dopant diffusion in (Ga)In(As)P : Fe layers s
electively deposited by metalorganic MBE was assessed. Device quality regro
wth and the absence of lateral diffusion and accumulation effects is demons
trated as an essential feature for the fabrication of InP-based optoelectro
nic devices. (C) 1999 Elsevier Science B.V. All rights reserved.