GSMBE grown In0.49Ga0.51P/(In)GaAs/GaAs high hole mobility transistor structures

In this paper, we report novel In0.49Ga0.51P/(In)GaAs/GaAs high-hole mobili ty transistor structures with different p-channel and doping methods. Elect rical and optical properties of the grown structures were investigated by V an der Pauw Hall measurement and low-temperature photoluminescence. The cur rent-voltage characteristics were performed on field effect transistors wit h "T"-shaped gates. By using delta-doping technique, 2DHG densities of 2.78 x 10(12) and 1.02 x 10(12) cm(-2) with mobility of 191 and 2831 cm(2)/V s at 300 and 77 K for In0.49Ga0.51P/GaAs structures have been achieved. For I n0.49Ga0.51P/In0.2Ga0.8As/GaAs structures,2DHG densities increased to 2.84 x 10(12) and 1.29 x 10(12) cm(-2) with mobility increasing to 208 and 2972 cm(2)/V s at 300 and 77 KI respectively. Photoluminescence spectra of In0.4 9Ga0.51P/In0.2Ga0.8As/GaAs modulation doped heterostructure shows a peak lo cated at 1.310 eV, which is attributed to a transition from V-3/2 band to c onduction band. The processed high-hole mobility transistors have a maximum extrinsic transconductance of 35 mS/mm and a maximum saturation current of 57 mA/mm at 300 K. (C) 1999 Elsevier Science B.V. All rights reserved.