Very high electron mobilities at low temperatures in InxGa1-xAs/InyAl1-yAsHEMTs grown lattice-mismatched on GaAs substrates

Authors
Gozu, S Tsuboki, K Hayashi, M Hong, CL Yamada, S
Citation
S. Gozu et al., Very high electron mobilities at low temperatures in InxGa1-xAs/InyAl1-yAsHEMTs grown lattice-mismatched on GaAs substrates, J CRYST GR, 202, 1999, pp. 749-752
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
749 - 752
Database
ISI
SICI code
0022-0248(199905)202:<749:VHEMAL>2.0.ZU;2-C
Abstract
We have grown InxGa1-xAs/InyAl1-yAs HEMTs on GaAs substrate via InAlAs step -graded buffer and obtained electron mobilities of 397,000 cm(2)/Vs at 4.2 K, for x = y = 0.75. Comparing the results with those of x = y = 0.75 and x = y = 0.5 HEMTs, it is concluded that the high mobility was attained mainl y due to the reduced alloy scattering with no interface strain condition. ( C) 1999 Elsevier Science B.V. All rights reserved.