Optimization of layer structure for InGaAs channel pseudomorphic HEMTs

Authors
Pearson, JL Holland, MC Stanley, CR Long, AR Skuras, E Asenov, A Davies, JH
Citation
Jl. Pearson et al., Optimization of layer structure for InGaAs channel pseudomorphic HEMTs, J CRYST GR, 202, 1999, pp. 757-760
Citations number
10
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
757 - 760
Database
ISI
SICI code
0022-0248(199905)202:<757:OOLSFI>2.0.ZU;2-D
Abstract
Electron scattering in the pseudomorphic InGaAs channel of an InGaAs-AlGaAs heterostructure grown by molecular beam epitaxy has been studied at low te mperatures to optimize the layer structure for use at 300 K in high-frequen cy transistors (p-HEMTs). (C) 1999 Elsevier Science B.V. All rights reserve d.