Magneto-resistance effect in InSb thin film grown using molecular beam epitaxy

Authors
Okamoto, A Yoshida, T Muramatsu, S Shibasaki, I
Citation
A. Okamoto et al., Magneto-resistance effect in InSb thin film grown using molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 765-768
Citations number
4
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
765 - 768
Database
ISI
SICI code
0022-0248(199905)202:<765:MEIITF>2.0.ZU;2-Z
Abstract
The magneto-resistance effect in InSb thin films grown on semi-insulating G aAs (1 0 0) surface using molecular beam epitaxy was studied, along with th e effect of Si doping. The temperature dependence of the resistivity in the InSb thin films with high electron mobility decreased significantly when S i was used as a donor impurity. Consequently, InSb thin film grown using MB E can be used as a highly sensitive magneto-resistance element suitable for such applications as magnetic sensing. (C) 1999 Elsevier Science B.V. All rights reserved.