Selective molecular beam epitaxy (MBE) growth of GaAs AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics

We report on the formation and optical characteristics of ridge waveguide s tructures containing quantum wires (QWRs). To form a waveguide? we adopted digital alloys, i.e. short-period superlattices (SLs), rapid changes of As fluxes using valved cells, growth temperatures (T-s), and introduction of g rowth interruptions. Stimulated emission from these ridge QWR laser structu res was observed at temperatures 4.7-290 K by optical pumping. (C) 1999 Els evier Science B.V. All rights reserved.