Uniform quantum wire and quantum dot arrays by atomic hydrogen assisted MBE on patterned high-index substrate: role of atomic hydrogen in natural self-faceting

The feasibility of combining natural self-faceting in atomic hydrogen assis ted MBE with patterned growth for the formation of. novel quantum wire and quantum dot arrays with superior structural and electronic properties is hi ghlighted. From the pronounced modification of the surface morphology of hi gh-index planes a model for the influence of atomic hydrogen on epitaxial g rowth is developed. The model is based on an enhanced adatom incorporation at step-down sites by lowering the energy barrier at step edges to promote step bunching. This is the key aspect of the study presented here. (C) 1999 Elsevier Science B.V. All rights reserved.