1.5 mu m Ga(Al)Sb laser grown on GaAs substrate by MBE

Authors
Koeth, J Bleuel, T Werner, R Forchel, A
Citation
J. Koeth et al., 1.5 mu m Ga(Al)Sb laser grown on GaAs substrate by MBE, J CRYST GR, 202, 1999, pp. 841-843
Citations number
4
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
841 - 843
Database
ISI
SICI code
0022-0248(199905)202:<841:1MMGLG>2.0.ZU;2-B
Abstract
Ga(Al)Sb-based laser diodes grown by molecular beam epitaxy on GaAs substra tes are presented. The properties of ridge waveguide lasers based on this s tructure are discussed. The lasers show lasing activity up to 273 K with a laser threshold current density of 6.58 kA/cm(2) at 77 K. (C) 1999 Elsevier Science B.V. All rights reserved.