S. Simanowski et al., Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb)layers for 2.0-2.5 mu m laser structures on GaSb substrates, J CRYST GR, 202, 1999, pp. 849-853
The incorporation of As and In during MBE growth in (AlGaIn)/(AsSb) layers
used for the fabrication of diode lasers in the 2.0-2.5 mu m wavelength ran
ge has been investigated. The As content was found to depend linearly on th
e beam equivalent pressure for As mole fractions between y = 0.05 and y = 0
.20. Broad area AlGaAsSb/GaInAsSb single-quantum well laser diodes with qua
si-cw output at room temperature at an emission wavelength of 2.03 mu m and
a threshold current density of 515 A/cm(2) for 1370 mu m long and 70 mu m
wide devices have been fabricated. In order to shift the emission wavelengt
h of the laser structures to longer wavelengths, the growth of lattice matc
hed AlGaAsSb/GaInAsSb laser core structures with different In and As mole f
ractions in the quantum wells has been investigated. (C) 1999 Elsevier Scie
nce B.V. All rights reserved.