X-ray diffraction study of InAs AlSb interface bonds grown by molecular beam epitaxy

Interface bond structures of InAs/AlSb superlattices (SLs) have been invest igated by X-ray diffraction (XRD) and photoluminescence (PL) measurements. For heterointerfaces with different anion composition AsxSb1-x, XRD data ar e found to be in good agreement with simulation results assuming the presen ce of 1 monolayer InAsxSb1-x at the interfaces. For the sample with an AlAs interface bond, no good fit is obtained for XRD. This indicates that the g rowth of an InAs/AlSb SL is disrupted at the AlAs interfaces. Correlation b etween interface configurations and their optical properties is also discus sed. (C) 1999 Elsevier Science B.V. All rights reserved.