High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy

Authors
Nee, TE Yeh, NT Lee, JM Chyi, JI Lee, CT
Citation
Te. Nee et al., High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 905-908
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
905 - 908
Database
ISI
SICI code
0022-0248(199905)202:<905:HCTBIQ>2.0.ZU;2-D
Abstract
Be-doped In0.5Ga0.5As quantum dot lasers are fabricated and characterized b etween 20 and 70 degrees C. At 20 degrees C, the threshold current per dot layer and the slope efficiency are 22 mA and 0.18 W/A, respectively. The in ternal quantum efficiency and internal loss are 36% and 4.2 cm(-1), respect ively. Characteristic temperature as high as 122 K has been measured for th ese lasers. Room temperature continuous-wave operation has also been achiev ed. (C) 1999 Elsevier Science B.V. All rights reserved.