Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

The different steps of ZnSe substrate preparation are described. In situ hy drogen plasma cleaning to get rid of contaminations like thermally stable o xides on ZnSe substrate surfaces before growth is the crucial point to fabr icate reproducibly pseudomorphic (Mg,Zn) (S,Se) layers. It is found that th e crystalline quality of the layers depends strongly on that of the ZnSe su bstrates itself as well as on the initial growth start conditions. Finally, ZnSe-based laser diodes were grown on insulating and different kinds of co nducting ZnSe substrates. They operated at room temperature under pulsed co nditions. (C) 1999 Elsevier Science B.V. All rights reserved.