The influence of magnesium on p-type doping and optoelectronic properties of Zn1-xMgxSe-based heterostructures

Citation
B. Vogele et al., The influence of magnesium on p-type doping and optoelectronic properties of Zn1-xMgxSe-based heterostructures, J CRYST GR, 202, 1999, pp. 950-953
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
950 - 953
Database
ISI
SICI code
0022-0248(199905)202:<950:TIOMOP>2.0.ZU;2-G
Abstract
Zn1-xMgxSe-based heterostructures were grown by molecular beam epitaxy on ( 1 0 0) GaAs substrates, In this communication we report on the structural a nd electronic properties of ZnMgSe alloys and ZnSe/ZnMgSe quantum wells and on the influence of the magnesium incorporation on the doping behaviour of ZnMgSe : N materials. (C) 1999 Elsevier Science B.V. All rights reserved.