Molecular beam epitaxy growth of Be-chalcogenides and fabrication of ZnSe ZnMgBeSe laser structures

We have carried out detailed investigation on the growth of Be-chalcogenide s alloys and evaluated the device characteristics of optically pumped ZnSe/ ZnMgBeSe SQW. A lattice-matched ZnMgBeSe (E-g = 2.975 eV) layer shows a nar rower X-ray diffraction (XRD) peak, the FWHM (full-width at half-maximum) v alue of which is 21 arcsec. The variation of FWHM of X-ray rocking curve (X RC) due to lattice misfit is investigated for ZnMgBeSe quaternaries with va rious lattice misfits extending from compressive-to-tensile strain, which s hows that the FWHM value under compressive strain increases more steeply wi th lattice misfit than that under tensile strain. We report on the opticall y pumped lasing of a ZnSe/ZnMgBeSe single quantum well at 444 nm with a low threshold of 16 kW/cm(2) at room temperature and high-temperature lasing u p to 473 K. The characteristic temperature is estimated to be 166 K from th e exponential relation between threshold and temperature. (C) 1999 Elsevier Science B.V. All rights reserved.