Visible-blind ultra-violet detectors with nano-second response time

A two-step molecular beam epitaxy growth approach was developed to fabricat e a ZnSTe-based Schottky barrier photovoltaic ultra-violet (UV) detector ar ray on GaP(1 0 0) substrate. The detectors show visible blind and UV sensit ive response with peak UV responsivity of 0.13 A/W and 1.2 x 10(6) V/W at 3 20 nm. The built-in potential of the detector was determined to be 1.7 V. T emporal response of the device shows that the photocurrent decays with a ti me constant as fast as 1.2 ns, limited apparently by the RC constant of the detector structure. (C) 1999 Elsevier Science B.V. All rights reserved.