Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes

Authors
Orsila, S Kongas, J Toivonen, M Savolainen, P Jalonen, M Pessa, M
Citation
S. Orsila et al., Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodes, J CRYST GR, 202, 1999, pp. 985-989
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
985 - 989
Database
ISI
SICI code
0022-0248(199905)202:<985:SSMBEG>2.0.ZU;2-8
Abstract
We report on the solid source molecular beam epitaxy growth (SSMBE) of reso nant cavity light-emitting diodes (RCLED) operating at 660 and 1300 nm wave lengths using valved cracking cells. The 1300 nm RCLED reported here is acc ording to the best of the author's knowledge the first monolithic RCLED mad e on that wavelength. The performance characteristics of the grown devices show that SSMBE is a viable growth method for complex vertical cavity struc tures. (C) 1999 Elsevier Science B.V. All rights reserved.