Precise growth of high uniformity vertical cavity devices using tunable dynamic optical reflectometry

Precise control of epitaxial growth of(Ga, AI)As/AlAs vertical cavity devic es with a real-time thickness monitoring technique, the tunable dynamic opt ical reflectometry (TDOR), is investigated. After the measurement at growth temperature of the optical indices of the ternary alloys involved in these multilayers, the procedure required to efficiently grow under TDOR the dev ices of interest is discussed. Finally, the results obtained from the struc tures grown will be presented, showing that a layer thickness accuracy in e xcess of 1% can be achieved. (C) 1999 Elsevier Science B.V. All rights rese rved.