Molecular beam epitaxy growth of MgZnSSe/ZnSSe/CdZnSe microcavity light-emitting diodes using in situ reflectance monitoring

Authors
Uusimaa, P Sipila, P Saarinen, M Toikkanen, L Rinta-Moykky, A Pessa, M
Citation
P. Uusimaa et al., Molecular beam epitaxy growth of MgZnSSe/ZnSSe/CdZnSe microcavity light-emitting diodes using in situ reflectance monitoring, J CRYST GR, 202, 1999, pp. 1032-1035
Citations number
5
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
1032 - 1035
Database
ISI
SICI code
0022-0248(199905)202:<1032:MBEGOM>2.0.ZU;2-4
Abstract
Results on molecular beam epitaxy growth of MgZnSSe/ZnSSe/CdZnSe microcavit y light-emitting diodes are reported. Satisfactory control of the cavity re sonance and distributed Bragg reflector stop band position is obtained usin g in situ reflectance measurement for the layer thickness monitoring. Micro cavity light-emitting diodes show spectral emission width of 14-17 nm at 50 5-506 nm. A maximum wall-plug efficiency of 0.33% is measured from a device with a 40-mu m window diameter. (C) 1999 Elsevier Science B.V. All rights reserved.