Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors

We have grown distributed Bragg reflectors (DBRs) using two different combi nations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSe/ZnMgSSe system showed a reflecti vity maximum near 470 nm, but only with the modest value of 70%. The strain ed ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieve d with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe syst em. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system. (C) 1999 Elsevier Science B.V. All rights reserved.