Molecular beam deposition of thin films of organic semiconductors

Citation
A. Sassella et al., Molecular beam deposition of thin films of organic semiconductors, J CRYST GR, 202, 1999, pp. 1044-1048
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
1044 - 1048
Database
ISI
SICI code
0022-0248(199905)202:<1044:MBDOTF>2.0.ZU;2-T
Abstract
The ultra-high vacuum technique of organic molecular beam deposition (OMBD) has been recently proved to provide a very good method for growing highly controlled thin films of organic semiconductors, The approximate ordering o f a crystalline layer to a substrate, also called quasi-epitaxy, can be ach ieved with a proper choice of substrate and deposition conditions, Poly- an d oligo-thiophenes are among the most interesting and widely studied organi c semiconductors for applications in electronic and photonic devices, thank s to their high carrier mobility and large nonlinear optical response, comb ined with an exceptionally high flexibility of molecular engineering. Here, the deposition and the main properties of films of substituted sexithiophe ne molecules (6T) obtained by OMBD are discussed on the basis of X-ray diff raction and optical absorption measurements, (C) 1999 Elsevier Science B.V. All rights reserved.