H. Asahi et al., Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applications, J CRYST GR, 202, 1999, pp. 1069-1072
New III-V semiconductors TIInGaP and TIInGaAs (Tl composition of less than
0.1) are grown on InP substrates by gas source molecular beam epitaxy. They
are proposed for long wavelength optical devices as well as temperature-in
sensitive wavelength laser diodes. Grown layers are characterized by the me
asurements on the temperature variation of photoconductance and photolumine
scence. It is observed that the bandgap energy shows small-temperature vari
ation suggesting the existence of temperature-independent bandgap energy in
these material systems for the layers with increased Tl composition. (C) 1
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