Optical responses of exciton-polaritons confined in thin GaAs AlGaAs coupled multi-quantum-well layers

Citation
T. Isu et al., Optical responses of exciton-polaritons confined in thin GaAs AlGaAs coupled multi-quantum-well layers, J CRYST GR, 202, 1999, pp. 1093-1096
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
1093 - 1096
Database
ISI
SICI code
0022-0248(199905)202:<1093:OROECI>2.0.ZU;2-T
Abstract
We have measured the Brewster angle reflection spectra of thin GaAs layers and GaAs/Al0.3Ga0.7As coupled multi-quantum-wells (coupled-MQW) layers. The reflection spectra for the GaAs thin layers showed clear peaks correspondi ng to energies of exciton-polaritons quantized in the layers. This means th at exciton translational motion along the normal direction of the layer is coherently extended and quantized due to the confinement within the layer. We observed, moreover, remarkable thickness dependence of the spectra. For the GaAs/Al0.3Ga0.7As coupled-MQW layers, the reflection spectra also show a similar spectra indicating the quantized exciton-polariton peaks. This in dicates a coupled-MQW layer is successfully grown with a high quality almos t same as a simple GaAs layer in which the coherency of free excitons exten ds over a whole layer. (C) 1999 Elsevier Science B.V. All rights reserved.