Highly strained InxGa1-xGaAs/InP quantum wells grown by solid source MBE for applications in the 2-2.3 mu m spectral range

High-quality pseudomorphic InP/InxGa1-xAs/InP (x = 0.85, 0.90) quantum well s have been grown by solid source molecular beam epitaxy using As and P val ved cracking cells under standard growth conditions. Photoluminescence meas urements at 77 and 300 K were used to characterize the optoelectronic quali ty of the films and the maximum operating wavelength. Promoting a 3D growth mode allows to extend the operating wavelength at 300 K up to similar to 2 .3 mu m (C) 1999 Elsevier Science B.V. All rights reserved.