Volume distributions of InAs GaAs self-assembled quantum dots by Stranski-Krastanow mode

Citation
Y. Ebiko et al., Volume distributions of InAs GaAs self-assembled quantum dots by Stranski-Krastanow mode, J CRYST GR, 202, 1999, pp. 1150-1153
Citations number
5
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
1150 - 1153
Database
ISI
SICI code
0022-0248(199905)202:<1150:VDOIGS>2.0.ZU;2-W
Abstract
We studied the volume distributions of dislocation-free InAs/GaAs self-asse mbled quantum dots obtained by Stranski-Krastanow mode of molecular beam ep itaxy, with and without in situ annealing, The same scaling function was ob tained over a wide range of dot densities. The scaling function indicated t hat the cluster size fluctuation normalized by the average size is constant for all the quantum dot densities we studied. The resemblance of the scali ng function to that of the submonolayer homoepitaxial growth implies that t he strain is not the essential factor determining the cluster size distribu tion of quantum dots. (C) 1999 Elsevier Science B.V. All rights reserved.