Self-assembled InAs dots and quantum wires fabricated on patterned (311)A GaAs substrates by molecular beam epitaxy

We have investigated one-dimensionally arranged self-assembled growth of In As quantum dots and the formation of lateral n-i-p-i heterojunction quantum wire structures based on the facet-selective doping mechanism of an amphot eric silicon dopant. Both structures were successfully formed on the same f acet stripes on patterned (3 1 1)A GaAs substrates by molecular beam epitax y in a self-organized way, thus enabling quantum dots to be selectively for med along the quantum wires in a single growth sequence. (C) 1999 Published by Elsevier Science B.V. All rights reserved.