In(Ga)As/GaAs self-organized quantum dot light emitters grown on silicon substrates

We report growth characteristics of In(Ga)As/GaAs self-organized quantum do ts on Si substrates. Low temperature (17 K) photoluminescence indicates an emission peak centered at 1.057 mu m having a linewidth (FWHM) of 64 meV. A tomic force microscopy (AFM) images confirm a regular array of In0.4Ga0.6As dots with a density of 1.2 x 10(11) cm(-2) for 8 monolayers of growth. We have also achieved electroluminescence from edge-emitting guided-wave LED h eterostructures, containing a 3-5 layer In0.4Ga0.6As/GaAs quantum dot activ e region. These devices have demonstrated maximum power outputs of 3 mu W ( 1.4 mW) at 300 K (17 K). (C) 1999 Published by Elsevier Science B.V. All ri ghts reserved.