Self-organized InAs quantum dots in a silicon matrix

Authors
Egorov, AY Kovsh, AR Ustinov, VM Zhukov, AE Maksimov, MV Cirlin, GE Ledentsov, NN Bimberg, D Werner, P Alferov, ZI
Citation
Ay. Egorov et al., Self-organized InAs quantum dots in a silicon matrix, J CRYST GR, 202, 1999, pp. 1202-1204
Citations number
3
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
202
Year of publication
1999
Pages
1202 - 1204
Database
ISI
SICI code
0022-0248(199905)202:<1202:SIQDIA>2.0.ZU;2-N
Abstract
Self-organized three-dimensional InAs islands matching the QD size requirem ents were fabricated by solid source MBE in a silicon matrix on Si(1 0 0) s urface. The PL line originating from this islands was observed at about 1.3 mu m up to the room temperature. (C) 1999 Elsevier Science B.V. All rights reserved.